Price search results for Vishay CNY17 1 DIP 6 Type misc. PhototransistorSingle
Collector current: 100 mA; Collector-emitter saturation voltage (max.): 300 mV; Creepage distance: 7 mm; Current transfer ratio (max.):...read more
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Collector current: 100 mA; Collector-emitter saturation voltage (max.
): 300 mV; Creepage distance: 7 mm; Current transfer ratio (max.
): 300 %; Current transfer ratio (min.
): 100 %; Current transfer ratio (min.
) - current reference: 10 mA; Enclosure type (semiconductors): DIP 6; Fall time: 5 µs; Forward current I(F): 60 mA; Forward voltage U(F) max: 1.
65 V; Forward voltage U(F) typ.
: 1.
45 V; Input type: DC; Insulation voltage: 5000 V RMS; Manufacturer code (components): VIS; Mounting type: Through-hole; No.
of channels: 1; Operating temperature (max.
): -55 °C; Operating temperature (min.
) (num): +100 °C; Output type: Transistor (+ base); Power (max) P(TOT): 150 mW; Power output/channel: 150 mA; Reverse voltage U(R): 6 V; Slew rate: 5 µs; Voltage output (max.
): 70 V
): 300 mV; Creepage distance: 7 mm; Current transfer ratio (max.
): 300 %; Current transfer ratio (min.
): 100 %; Current transfer ratio (min.
) - current reference: 10 mA; Enclosure type (semiconductors): DIP 6; Fall time: 5 µs; Forward current I(F): 60 mA; Forward voltage U(F) max: 1.
65 V; Forward voltage U(F) typ.
: 1.
45 V; Input type: DC; Insulation voltage: 5000 V RMS; Manufacturer code (components): VIS; Mounting type: Through-hole; No.
of channels: 1; Operating temperature (max.
): -55 °C; Operating temperature (min.
) (num): +100 °C; Output type: Transistor (+ base); Power (max) P(TOT): 150 mW; Power output/channel: 150 mA; Reverse voltage U(R): 6 V; Slew rate: 5 µs; Voltage output (max.
): 70 V