Price search results for Vishay 4N35 Optocoupler DIP 6 Type misc. PhototransistorSingle
Collector current: 100 mA; Collector-emitter saturation voltage (max.): 200 mV; Creepage distance: 7 mm; Current transfer ratio (max.):...read more
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Collector current: 100 mA; Collector-emitter saturation voltage (max.
): 200 mV; Creepage distance: 7 mm; Current transfer ratio (max.
): 160 %; Current transfer ratio (min.
): 80 %; Current transfer ratio (min.
) - current reference: 5 mA; Enclosure type (semiconductors): DIP 6; Fall time: 3 µs; Forward current I(F): 50 mA; Forward voltage U(F) max: 1.
5 V; Forward voltage U(F) typ.
: 1.
2 V; Input type: DC; Insulation voltage: 5000 V RMS; Manufacturer code (components): VIS; Mounting type: Through-hole; No.
of channels: 1; Operating temperature (max.
): -30 °C; Operating temperature (min.
) (num): +100 °C; Output type: Transistor; Power (max) P(TOT): 70 mW; Power output/channel: 50 mA; Reverse voltage U(R): 6 V; Slew rate: 4 µs; Voltage output (max.
): 80 V
): 200 mV; Creepage distance: 7 mm; Current transfer ratio (max.
): 160 %; Current transfer ratio (min.
): 80 %; Current transfer ratio (min.
) - current reference: 5 mA; Enclosure type (semiconductors): DIP 6; Fall time: 3 µs; Forward current I(F): 50 mA; Forward voltage U(F) max: 1.
5 V; Forward voltage U(F) typ.
: 1.
2 V; Input type: DC; Insulation voltage: 5000 V RMS; Manufacturer code (components): VIS; Mounting type: Through-hole; No.
of channels: 1; Operating temperature (max.
): -30 °C; Operating temperature (min.
) (num): +100 °C; Output type: Transistor; Power (max) P(TOT): 70 mW; Power output/channel: 50 mA; Reverse voltage U(R): 6 V; Slew rate: 4 µs; Voltage output (max.
): 80 V