Price search results for STMicroelectronics Transistor BJT Discrete TIP142 TO 247 3 No. of channels 1 NPN Darlington
Collector current: 10 A; Collector cutoff current: 2 mA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage...read more
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Collector current: 10 A; Collector cutoff current: 2 mA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.
): 3 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 247 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 125 W; Type (transistors): NPN - Darlington
): 3 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 247 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 125 W; Type (transistors): NPN - Darlington