Price search results for STMicroelectronics Transistor BJT Discrete MJE340 SOT 32 3 No. of channels 1 NPN
Collector current: 500 mA; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 300 V; Collector-emitter saturation...read more
Subscribe
Collector current: 500 mA; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 300 V; Collector-emitter saturation voltage (max.
): 500 mV; DC current gain (hFE): 30; DC current gain hFE - reference current: 50 mA; DC current gain hFE - reference voltage: 10 V; Enclosure type (semiconductors): SOT 32 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 20.
8 W; Type (transistors): NPN
): 500 mV; DC current gain (hFE): 30; DC current gain hFE - reference current: 50 mA; DC current gain hFE - reference voltage: 10 V; Enclosure type (semiconductors): SOT 32 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 20.
8 W; Type (transistors): NPN