Price search results for STMicroelectronics Transistor BJT Discrete BDX33C TO 220AB No. of channels 1 NPN Darlington
Collector current: 10 A; Collector cutoff current: 500 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage...read more
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Collector current: 10 A; Collector cutoff current: 500 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.
): 2.
5 V; DC current gain (hFE): 750; DC current gain hFE - reference current: 3 A; DC current gain hFE - reference voltage: 3 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 70 W; Type (transistors): NPN - Darlington
): 2.
5 V; DC current gain (hFE): 750; DC current gain hFE - reference current: 3 A; DC current gain hFE - reference voltage: 3 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 70 W; Type (transistors): NPN - Darlington