Price search results for STMicroelectronics Transistor BJT Discrete BD912 TO 220AB No. of channels 1 PNP
Collector current: -15 A; Collector cutoff current: -1 mA; Collector emitter voltage U(CEO): -100 V; Collector-emitter saturation voltage...read more
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Collector current: -15 A; Collector cutoff current: -1 mA; Collector emitter voltage U(CEO): -100 V; Collector-emitter saturation voltage (max.
): -3 V; DC current gain (hFE): 15; DC current gain hFE - reference current: -5 A; DC current gain hFE - reference voltage: -4 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 90 W; Transit frequency f(T): 3 MHz; Type (transistors): PNP
): -3 V; DC current gain (hFE): 15; DC current gain hFE - reference current: -5 A; DC current gain hFE - reference voltage: -4 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 90 W; Transit frequency f(T): 3 MHz; Type (transistors): PNP