Price search results for STMicroelectronics Transistor BJT Discrete BD678 SOT 32 3 No. of channels 1 PNP Darlington
Collector current: -4 A; Collector cutoff current: -500 µA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation...read more
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Collector current: -4 A; Collector cutoff current: -500 µA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.
): -2.
5 V; DC current gain (hFE): 750; DC current gain hFE - reference current: -1.
5 A; DC current gain hFE - reference voltage: -3 V; Enclosure type (semiconductors): SOT 32 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 40 W; Type (transistors): PNP - Darlington
): -2.
5 V; DC current gain (hFE): 750; DC current gain hFE - reference current: -1.
5 A; DC current gain hFE - reference voltage: -3 V; Enclosure type (semiconductors): SOT 32 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 40 W; Type (transistors): PNP - Darlington