Price search results for STMicroelectronics Transistor BJT Discrete BD438 SOT 32 No. of channels 1 PNP
Collector current: -4 A; Collector cutoff current: -100 µA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation...read more
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Collector current: -4 A; Collector cutoff current: -100 µA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.
): -600 mV; DC current gain (hFE): 30; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 32; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 36 W; Transit frequency f(T): 3 MHz; Type (transistors): PNP
): -600 mV; DC current gain (hFE): 30; DC current gain hFE - reference current: -10 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 32; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 36 W; Transit frequency f(T): 3 MHz; Type (transistors): PNP