Price search results for STMicroelectronics Transistor BJT Discrete BD239C TO 220 No. of channels 1 NPN
Collector current: 2 A; Collector cutoff current: 300 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage...read more
Subscribe
Collector current: 2 A; Collector cutoff current: 300 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.
): 700 mV; DC current gain (hFE): 15; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 2 W; Type (transistors): NPN
): 700 mV; DC current gain (hFE): 15; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 2 W; Type (transistors): NPN