Price search results for STMicroelectronics Transistor BJT Discrete BD237 SOT 32 3 No. of channels 1 NPN
Collector current: 2 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage...read more
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Collector current: 2 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.
): 600 mV; DC current gain (hFE): 25; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): SOT 32 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 25 W; Type (transistors): NPN
): 600 mV; DC current gain (hFE): 25; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): SOT 32 3; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 25 W; Type (transistors): NPN