Price search results for STMicroelectronics Transistor BJT Discrete BD138 SOT 32 No. of channels 1 PNP
Collector current: -1.5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation...read more
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Collector current: -1.
5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.
): -500 mV; DC current gain (hFE): 25; DC current gain hFE - reference current: -5 mA; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): SOT 32; Manufacturer code (components): STM; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 12.
5 W; Type (transistors): PNP
5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.
): -500 mV; DC current gain (hFE): 25; DC current gain hFE - reference current: -5 mA; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): SOT 32; Manufacturer code (components): STM; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 12.
5 W; Type (transistors): PNP