Price search results for STMicroelectronics Transistor BJT Arrays ULN2001A DIP 16 No. of channels 7 NPN Darlington
Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 1.6 V; DC current gain...read more
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Collector current: 500 mA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.
): 1.
6 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: 350 mA; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): DIP 16; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 7; Type (transistors): NPN - Darlington
): 1.
6 V; DC current gain (hFE): 1000; DC current gain hFE - reference current: 350 mA; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): DIP 16; Manufacturer code (components): STM; Mounting type: Through-hole; No.
of channels: 7; Type (transistors): NPN - Darlington