Price search results for ON Semiconductor Transistor BJT Discrete TIP35CG TO 247 No. of channels 1 NPN
Collector current: 25 A; Collector cutoff current: 1 mA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage...read more
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Collector current: 25 A; Collector cutoff current: 1 mA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.
): 4 V; DC current gain (hFE): 15; DC current gain hFE - reference current: 15 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 247; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 125 W; Transit frequency f(T): 3 MHz; Type (transistors): NPN
): 4 V; DC current gain (hFE): 15; DC current gain hFE - reference current: 15 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 247; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 125 W; Transit frequency f(T): 3 MHz; Type (transistors): NPN