Price search results for ON Semiconductor Transistor BJT Discrete MMBT2222A SOT 23 3 No. of channels 1 NPN
Collector current: 1 A; Collector cutoff current: 10 nA; Collector emitter voltage U(CEO): 40 V; Collector-emitter saturation voltage...read more
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Collector current: 1 A; Collector cutoff current: 10 nA; Collector emitter voltage U(CEO): 40 V; Collector-emitter saturation voltage (max.
): 1 V; DC current gain (hFE): 100; DC current gain hFE - reference current: 150 mA; DC current gain hFE - reference voltage: 10 V; Enclosure type (semiconductors): SOT 23-3; Manufacturer code (components): OnS; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 350 mW; Transit frequency f(T): 300 MHz; Type (transistors): NPN
): 1 V; DC current gain (hFE): 100; DC current gain hFE - reference current: 150 mA; DC current gain hFE - reference voltage: 10 V; Enclosure type (semiconductors): SOT 23-3; Manufacturer code (components): OnS; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 350 mW; Transit frequency f(T): 300 MHz; Type (transistors): NPN