Collector current: -20 A; Collector cutoff current: -250 µA; Collector emitter voltage U(CEO): -140 V; Collector-emitter saturation voltage (max.
): -1 V; DC current gain (hFE): 25; DC current gain hFE - reference current: -5 A; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 250 W; Transit frequency f(T): 2 MHz; Type (transistors): PNP