Price search results for ON Semiconductor Transistor BJT Discrete MJ15003 TO 3 No. of channels 1 NPN
Collector current: 20 A; Collector cutoff current: 250 µA; Collector emitter voltage U(CEO): 140 V; Collector-emitter saturation voltage...read more
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Collector current: 20 A; Collector cutoff current: 250 µA; Collector emitter voltage U(CEO): 140 V; Collector-emitter saturation voltage (max.
): 1 V; DC current gain (hFE): 25; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 250 W; Transit frequency f(T): 2 MHz; Type (transistors): NPN
): 1 V; DC current gain (hFE): 25; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 250 W; Transit frequency f(T): 2 MHz; Type (transistors): NPN