Price search results for ON Semiconductor Transistor BJT Discrete D44H11TU TO 220 3 No. of channels 1 NPN
Collector current: 10 A; Collector cutoff current: 10 µA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage...read more
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Collector current: 10 A; Collector cutoff current: 10 µA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.
): 1 V; DC current gain (hFE): 40; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference voltage: 1 V; Enclosure type (semiconductors): TO 220 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 60 W; Transit frequency f(T): 50 MHz; Type (transistors): NPN
): 1 V; DC current gain (hFE): 40; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference voltage: 1 V; Enclosure type (semiconductors): TO 220 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 60 W; Transit frequency f(T): 50 MHz; Type (transistors): NPN