Price search results for ON Semiconductor Transistor BJT Discrete BUX85G TO 220AB No. of channels 1 NPN
Collector current: 2 A; Collector cutoff current: 200 µA; Collector emitter voltage U(CEO): 450 V; Collector-emitter saturation voltage...read more
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Collector current: 2 A; Collector cutoff current: 200 µA; Collector emitter voltage U(CEO): 450 V; Collector-emitter saturation voltage (max.
): 1 V; DC current gain (hFE): 30; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 50 W; Transit frequency f(T): 4 MHz; Type (transistors): NPN
): 1 V; DC current gain (hFE): 30; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 50 W; Transit frequency f(T): 4 MHz; Type (transistors): NPN