Price search results for ON Semiconductor Transistor BJT Discrete BD241CTU TO 220 No. of channels 1 NPN
Collector current: 3 A; Collector cutoff current: 300 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage...read more
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Collector current: 3 A; Collector cutoff current: 300 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.
): 1.
2 V; DC current gain (hFE): 25; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 40 W; Type (transistors): NPN
): 1.
2 V; DC current gain (hFE): 25; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 40 W; Type (transistors): NPN