Price search results for ON Semiconductor Transistor BJT Discrete BD14010STU TO 126 3 No. of channels 1 PNP
Collector current: -1.5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -80 V; Collector-emitter saturation...read more
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Collector current: -1.
5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -80 V; Collector-emitter saturation voltage (max.
): -500 mV; DC current gain (hFE): 63; DC current gain hFE - reference current: -150 mA; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): TO 126 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 1.
25 W; Type (transistors): PNP
5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -80 V; Collector-emitter saturation voltage (max.
): -500 mV; DC current gain (hFE): 63; DC current gain hFE - reference current: -150 mA; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): TO 126 3; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 1.
25 W; Type (transistors): PNP