Price search results for ON Semiconductor Transistor BJT Discrete BC817 25LT1G SOT 23 NPN Tape on Full reel
Collector current: 0.5 A; Collector emitter voltage U(CEO): 45 V; DC current gain hFE - reference current: 160 µA; Enclosure type...read more
Subscribe
Collector current: 0.
5 A; Collector emitter voltage U(CEO): 45 V; DC current gain hFE - reference current: 160 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT): 0.
225 W; Transit frequency f(T): 0.
1 GHz; Type (transistors): NPN
5 A; Collector emitter voltage U(CEO): 45 V; DC current gain hFE - reference current: 160 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT): 0.
225 W; Transit frequency f(T): 0.
1 GHz; Type (transistors): NPN