Price search results for ON Semiconductor Transistor BJT Discrete 2SC5200OTU TO 264 No. of channels 1 NPN
Collector current: 17 A; Collector cutoff current: 5 µA; Collector emitter voltage U(CEO): 250 V; Collector-emitter saturation voltage...read more
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Collector current: 17 A; Collector cutoff current: 5 µA; Collector emitter voltage U(CEO): 250 V; Collector-emitter saturation voltage (max.
): 3 V; DC current gain (hFE): 80; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 264; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 150 W; Transit frequency f(T): 30 MHz; Type (transistors): NPN
): 3 V; DC current gain (hFE): 80; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 264; Manufacturer code (components): OnS; Mounting type: Through-hole; No.
of channels: 1; Power (max) P(TOT): 150 W; Transit frequency f(T): 30 MHz; Type (transistors): NPN