Price search results for ON Semiconductor Transistor BJT Discrete 2N3055G TO 3 No. of channels 1 NPN
Collector current: 15 A; Collector cutoff current: 700 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage...read more
Subscribe
Collector current: 15 A; Collector cutoff current: 700 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.
): 3 V; DC current gain (hFE): 20; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Enclosure; No.
of channels: 1; Power (max) P(TOT): 115 W; Type (transistors): NPN
): 3 V; DC current gain (hFE): 20; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 3; Manufacturer code (components): OnS; Mounting type: Enclosure; No.
of channels: 1; Power (max) P(TOT): 115 W; Type (transistors): NPN