Price search results for ON Semiconductor NDT2955 MOSFET 1 P channel 1.1 W SOT 223 4
C(ISS): 601 pF; C(ISS) reference voltage: 30 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SOT 223 4; I(d): 2.5...read more
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C(ISS): 601 pF; C(ISS) reference voltage: 30 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SOT 223 4; I(d): 2.
5 A; Manufacturer code (components): OnS; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 1.
1 W; Q(G): 15 nC; Q(G) reference voltage: 10 V; R(DS)(on): 300 mΩ; R(DS)(on) reference current: 2.
5 A; R(DS)(on) reference voltage: 10 V; Transistor property: Standard; Type (transistors): P-channel ; U(DSS): 60 V; U(GS)(th) max.
: 4 V; U(GS)(th) reference current (max.
): 250 µA
5 A; Manufacturer code (components): OnS; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 1.
1 W; Q(G): 15 nC; Q(G) reference voltage: 10 V; R(DS)(on): 300 mΩ; R(DS)(on) reference current: 2.
5 A; R(DS)(on) reference voltage: 10 V; Transistor property: Standard; Type (transistors): P-channel ; U(DSS): 60 V; U(GS)(th) max.
: 4 V; U(GS)(th) reference current (max.
): 250 µA