Price search results for ON Semiconductor NDS355AN MOSFET 1 N channel 460 mW TO 236 3
C(ISS): 195 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): TO 236 3; I(d): 1.7...read more
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C(ISS): 195 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): TO 236 3; I(d): 1.
7 A; Manufacturer code (components): OnS; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 460 mW; Q(G): 5 nC; Q(G) reference voltage: 5 V; R(DS)(on): 85 mΩ; R(DS)(on) reference current: 1.
9 A; R(DS)(on) reference voltage: 10 V; Transistor property: Logic level gate; Type (transistors): N-channel ; U(DSS): 30 V; U(GS)(th) max.
: 2 V; U(GS)(th) reference current (max.
): 250 µA
7 A; Manufacturer code (components): OnS; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 460 mW; Q(G): 5 nC; Q(G) reference voltage: 5 V; R(DS)(on): 85 mΩ; R(DS)(on) reference current: 1.
9 A; R(DS)(on) reference voltage: 10 V; Transistor property: Logic level gate; Type (transistors): N-channel ; U(DSS): 30 V; U(GS)(th) max.
: 2 V; U(GS)(th) reference current (max.
): 250 µA