Price search results for Nexperia Transistor BJT Discrete BSP43 SOT 223 No. of channels 1 NPN
Collector current: 1 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage...read more
Subscribe
Collector current: 1 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.
): 500 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 223; Manufacturer code (components): NEX; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 1.
3 W; Transit frequency f(T): 100 MHz; Type (transistors): NPN
): 500 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 223; Manufacturer code (components): NEX; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 1.
3 W; Transit frequency f(T): 100 MHz; Type (transistors): NPN