Price search results for Nexperia Transistor BJT Discrete BC847C215 SOT 23 No. of channels 1 NPN
Collector current: 100 mA; Collector cutoff current: 15 nA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage...read more
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Collector current: 100 mA; Collector cutoff current: 15 nA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.
): 400 mV; DC current gain (hFE): 420; DC current gain hFE - reference current: 2 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 23; Manufacturer code (components): NEX; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 250 mW; Transit frequency f(T): 100 MHz; Type (transistors): NPN
): 400 mV; DC current gain (hFE): 420; DC current gain hFE - reference current: 2 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 23; Manufacturer code (components): NEX; Mounting type: Surface-mount; No.
of channels: 1; Power (max) P(TOT): 250 mW; Transit frequency f(T): 100 MHz; Type (transistors): NPN