Price search results for Infineon Technologies IRLML2502TRPBF MOSFET 1 N channel 1.25 W SOT 23
C(ISS): 740 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SOT 23; I(d): 4.2 A;...read more
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C(ISS): 740 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SOT 23; I(d): 4.
2 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 1.
25 W; Q(G): 12 nC; Q(G) reference voltage: 5 V; R(DS)(on): 45 mΩ; R(DS)(on) reference current: 4.
2 A; R(DS)(on) reference voltage: 4.
5 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 20 V; U(GS)(th) max.
: 1.
2 V; U(GS)(th) reference current (max.
): 250 µA
2 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 1.
25 W; Q(G): 12 nC; Q(G) reference voltage: 5 V; R(DS)(on): 45 mΩ; R(DS)(on) reference current: 4.
2 A; R(DS)(on) reference voltage: 4.
5 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 20 V; U(GS)(th) max.
: 1.
2 V; U(GS)(th) reference current (max.
): 250 µA