Price search results for Infineon Technologies IRLML0100TRPBF MOSFET 1 N channel 1.3 W SOT 23
C(ISS): 290 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): SOT 23; I(d): 1.6 A;...read more
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C(ISS): 290 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): SOT 23; I(d): 1.
6 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 1.
3 W; Q(G): 2.
5 nC; Q(G) reference voltage: 4.
5 V; R(DS)(on): 220 mΩ; R(DS)(on) reference current: 1.
6 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.
: 2.
5 V; U(GS)(th) reference current (max.
): 25 µA
6 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 1.
3 W; Q(G): 2.
5 nC; Q(G) reference voltage: 4.
5 V; R(DS)(on): 220 mΩ; R(DS)(on) reference current: 1.
6 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.
: 2.
5 V; U(GS)(th) reference current (max.
): 25 µA