Price search results for Infineon Technologies IRFB4710PBF MOSFET 1 N channel 3.8 W TO 220AB
C(ISS): 6160 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 75...read more
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C(ISS): 6160 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 75 A; Manufacturer code (components): INF; Mounting type: Through-hole; No.
of channels: 1; Operating temperature (max.
): +175 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 3.
8 W; Q(G): 170 nC; Q(G) reference voltage: 10 V; R(DS)(on): 14 mΩ; R(DS)(on) reference current: 45 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.
: 5.
5 V; U(GS)(th) reference current (max.
): 250 µA
of channels: 1; Operating temperature (max.
): +175 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 3.
8 W; Q(G): 170 nC; Q(G) reference voltage: 10 V; R(DS)(on): 14 mΩ; R(DS)(on) reference current: 45 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.
: 5.
5 V; U(GS)(th) reference current (max.
): 250 µA