Price search results for Infineon Technologies IRF7459 MOSFET 1 N channel 2.5 W SO 8
C(ISS): 2480 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SO 8; I(d): 12 A; Manufacturer...read more
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C(ISS): 2480 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 20 V; Enclosure type (semiconductors): SO 8; I(d): 12 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No.
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 2.
5 W; Q(G): 35 nC; Q(G) reference voltage: 4.
5 V; R(DS)(on): 9 mΩ; R(DS)(on) reference current: 12 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 20 V; U(GS)(th) max.
: 2 V; U(GS)(th) reference current (max.
): 250 µA
of channels: 1; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -55 °C; Power (max) P(TOT): 2.
5 W; Q(G): 35 nC; Q(G) reference voltage: 4.
5 V; R(DS)(on): 9 mΩ; R(DS)(on) reference current: 12 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 20 V; U(GS)(th) max.
: 2 V; U(GS)(th) reference current (max.
): 250 µA