Price search results for Infineon Technologies IGW25N120H3FKSA1 IGBT TO 247 1200 V Tube
Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.8 V; (ICpulse) Pulsed collector current: 100 A.; Collector...read more
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Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.
8 V; (ICpulse) Pulsed collector current: 100 A.
; Collector current: 50 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting type: Through-hole; Off delay t(d)(off)(2): 277 ns; On delay (t(d)(on): 27 ns; Packaging type (components): Tube
8 V; (ICpulse) Pulsed collector current: 100 A.
; Collector current: 50 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting type: Through-hole; Off delay t(d)(off)(2): 277 ns; On delay (t(d)(on): 27 ns; Packaging type (components): Tube