Price search results for Diotec Schottky diode PPS560 3G TO 277B 60 V
Additional technical information: Type SMDCasing TO-277B.Periodic Peak Reverse Voltage - VRRM 60 VContinuous current - IFAV 5.00 AJunction...read more
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Additional technical information: Type SMDCasing TO-277B.
Periodic Peak Reverse Voltage - VRRM 60 VContinuous current - IFAV 5.
00 AJunction temperature - Tjmax 150 °CForward voltage - VF 0.
55 VIF 5.
00 ASurge current - IFSM 100.
00 AReverse current - IR 80,000 µAVR 60 VLock layer capacity - CJ 200 pFVR 4 V; Diode capacitance C(D): 200 pF; Enclosure type (semiconductors): TO-277B; Forward current I(F): 5 A; Forward voltage U(F): 0.
55 V; Mounting type: Surface-mount; Operating temperature (max.
): 150 °C; Peak forward surge current I(FSM): 100 A; Reverse leakage current I(r): 80 µA; Reverse voltage U(R): 60 V
Periodic Peak Reverse Voltage - VRRM 60 VContinuous current - IFAV 5.
00 AJunction temperature - Tjmax 150 °CForward voltage - VF 0.
55 VIF 5.
00 ASurge current - IFSM 100.
00 AReverse current - IR 80,000 µAVR 60 VLock layer capacity - CJ 200 pFVR 4 V; Diode capacitance C(D): 200 pF; Enclosure type (semiconductors): TO-277B; Forward current I(F): 5 A; Forward voltage U(F): 0.
55 V; Mounting type: Surface-mount; Operating temperature (max.
): 150 °C; Peak forward surge current I(FSM): 100 A; Reverse leakage current I(r): 80 µA; Reverse voltage U(R): 60 V