Price search results for Diotec Fast Si diode BAS21 SOT 23 I 120 V 200 mA Tape cut
Enclosure type (semiconductors): SOT 23 I; Forward current I(F): 200 mA; Forward voltage U(F): 1.25 V; Forward voltage reference: 200...read more
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Enclosure type (semiconductors): SOT 23 I; Forward current I(F): 200 mA; Forward voltage U(F): 1.
25 V; Forward voltage reference: 200 mA; Manufacturer code (components): DIO; Mounting type: Surface-mount; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -50 °C; Packaging type (components): Tape cut; Reverse leakage current I(r): 100 µA; Reverse leakage current I(r) reference: 100 V; Reverse recovery time T(rr): 50 ns; Reverse voltage U(R): 120 V
25 V; Forward voltage reference: 200 mA; Manufacturer code (components): DIO; Mounting type: Surface-mount; Operating temperature (max.
): +150 °C; Operating temperature (min.
) (num): -50 °C; Packaging type (components): Tape cut; Reverse leakage current I(r): 100 µA; Reverse leakage current I(r) reference: 100 V; Reverse recovery time T(rr): 50 ns; Reverse voltage U(R): 120 V